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Здесь все параметры, которые в принципе можно задать
(«Телесистемы»: Конференция «Аналоговая схемотехника»)

миниатюрный аудио-видеорекордер mAVR

Отправлено Неизвестный 15 апреля 2005 г. 14:39
В ответ на: Только такие и умеет. отправлено Неизвестный 15 апреля 2005 г. 14:34


Name Parameter Units Default Level
LEVEL Model level (1,2,3) 1
VTO Zero-bias threshold voltage Volts 0 all
KP Transconductance A/sq V 2e-5 all
L Length m DEFL all
W Width m DEFW all
GAMMA Body threshold parameter sqrt(V) 0 all
PHI Surface inversion potential Volts 0.6 all
LAMBDA Channel length modulation 1/V 0 1,2
RD Drain ohmic resistance Ohms 0 all
RS Source ohmic resistance Ohms 0 all
CBD Zero-bias BD junction cap. F 0 all
CBS Zero-bias BS junction cap. F 0 all
IS Bulk pn saturation current Amps 1e-14 all
PB Bulk pn bottom potential Volts 0.8 all
CGSO GS overlap cap. per meter F/m 0 all
CGDO GD overlap cap. per meter F/m 0 all
CGBO GB overlap cap. per meter F/m 0 all
RSH Source and drain sheet res. Ohms/sq 0 all
CJ Bulk zero-bias bottom cap. F/sq m 0 all
MJ Bulk bottom grading coeff. 0.5 all
CJSW Bulk zero-bias sidewall cap. F/sq m 0 all
MJSW Bulk sidewall grading coeff. 0.33 all
JS Bulk saturation current density A/sq m 0 all
TOX Oxide thickness m 1E-7 all
NSUB Substrate doping 1/cm^3 NONE 2,3
NSS Surface state density 1/cm^2 NONE 2,3
NFS Fast surface state density 1/cm^2 NONE 2,3
TPG Type of material 1 2,3
XJ Metallurgical junction depth m 0 2,3
LD Lateral diffusion (length) m 0 all
WD Lateral diffusion (width) m 0 all
UO Surface mobility sq cm/V/s 600 2,3
UCRIT Mobility critical field V/cm 1e4 2
UEXP Mobility exponent 0 2
UTRA Mobility trans. field coeff. m/s 0 2
VMAX Maximum carrier drift velocity m/s 0 2,3
NEFF Total channel charge coeff. 1 2
XQC Channel charge coefficient 1 2,3
KF Flicker noise coefficient 0 all
AF Flicker noise exponent 1 all
FC Forward bias depletion coeff. 0.5 all
DELTA Threshold width effect 0 2,3
THETA Mobility modulation 1/V 0 3
ETA Static feedback on VTO 0 3
KAPPA Saturation field factor 0.2 3
RG Gate ohmic resistance Ohms 0 all
RB Bulk ohmic resistance Ohms 0 all
RDS Fixed DS parallel resistance Ohms INF all
JSSW Bulk pn sidewall current den. A/m 0 all
N Bulk pn emission coefficient 1 all
PBSW Bulk pn sidewall potential Volts PB all
TT Bulk pn transit time sec. 0 all
T_MEASURED Measured temperature Celsius undefined all
T_ABS Absolute temperature Celsius undefined all
T_REL_GLOBAL Relative to current temperature Celsius undefined all
T_REL_LOCAL Relative to AKO model temperature Celsius undefined all


T is the device operating temperature and Tnom is the temperature at which the model parameters are measured. Both are expressed in degrees Kelvin. T is set to the analysis temperature from the Analysis Limits dialog box. TNOM is determined by the Global Settings TNOM value, which can be overridden with a .OPTIONS statement. T and Tnom may be customized for each model by specifying the parameters T_MEASURED, T_ABS, T_REL_GLOBAL, and T_REL_LOCAL. Information on T_MEASURED, T_ABS, T_REL_GLOBAL, AND T_REL_LOCAL can be found in the .model temperature parameter section.



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